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l f p a k 3 3 PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications 26 march 2013 product data sheet scan or click this qr code to view the latest information for this product 1. general description new standards and proprietary approaches are enabling the next generation of power- over-ethernet (poe) systems capable of delivering up to 100w to each powered device (pd). large screen lcd displays, 3g / 4g / wi-fi hot-spots and pan-tilt-zoom cctv cameras, for example, are placing increased demands on the power sourcing equipment (pse) in terms of soft-start procedures, resilience to short-circuits, thermal management and power density. part of nxps nextpower live mosfet portfolio, the PSMN075-100MSE has been designed specifically to compliment the latest poe controllers, offering both superior linear mode operation and very low r ds(on) in a cost- effective, industry compatible, lfpak33 package. 2. features and benefits ? enhanced forward biased safe operating area for superior linear mode operation ? low rdson for low conduction losses ? ultra reliable lfpak33 package C no glue, no wires, 175c ? very low i dss 3. applications ? ieee802.3at and proprietary solutions - (type 2) ? suitable for poe applications upto 30w ? use psmn040-100mse for higher power requirements 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c - - 100 v i d drain current t j = 25 c; v gs = 10 v; fig. 1 - - 18 a p tot total power dissipation t mb = 25 c; fig. 2 - - 65 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 5 a; t j = 25 c; fig. 12 - 57 71 m dynamic characteristics q gd gate-drain charge v gs = 10 v; i d = 5 a; v ds = 50 v; t j 25 c; fig. 14 ; fig. 15 - 5.3 - nc
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 2 / 13 symbol parameter conditions min typ max unit q g(tot) total gate charge v gs = 10 v; i d = 5 a; v ds = 50 v; t j = 25 c; fig. 14 ; fig. 15 - 16.4 - nc avalanche ruggedness e ds(al)s non-repetitive drain- source avalanche energy v gs = 10 v; t j(init) = 25 c; i d = 18 a; v sup 100 v; r gs = 50 ; unclamped; fig. 3 - - 25 mj 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 s source 2 s source 3 s source 4 g gate mb d mounting base; connected to drain 1 4 3 2 lfpak33 (sot1210) s d g m b b 0 7 6 6. ordering information table 3. ordering information package type number name description version PSMN075-100MSE lfpak33 plastic single ended surface mounted package (lfpak33); 4 leads sot1210 7. marking table 4. marking codes type number marking code PSMN075-100MSE m75e10 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c - 100 v v dgr drain-gate voltage t j 25 c; t j 175 c; r gs = 20 k - 100 v
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 3 / 13 symbol parameter conditions min max unit v gs gate-source voltage -20 20 v v gs = 10 v; t j = 25 c; fig. 1 - 18 a i d drain current v gs = 10 v; t mb = 100 c; fig. 1 - 13 a i dm peak drain current pulsed; t p 10 s; t mb = 25 c; fig. 4 - 74 a p tot total power dissipation t mb = 25 c; fig. 2 - 65 w t stg storage temperature -55 175 c t j junction temperature -55 175 c t sld(m) peak soldering temperature - 260 c source-drain diode i s source current t mb = 25 c - 54 a i sm peak source current pulsed; t p 10 s; t mb = 25 c - 74 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy v gs = 10 v; t j(init) = 25 c; i d = 18 a; v sup 100 v; r gs = 50 ; unclamped; fig. 3 - 25 mj 003aak714 0 2 5 5 0 7 5 100 125 150 175 200 0 4 8 1 2 1 6 2 0 t j (c) i d i d (a) (a) fig. 1. continuous drain current as a function of mounting base temperature t m b ( c ) 0 2 0 0 1 5 0 5 0 1 0 0 0 3 a a 1 6 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 2. normalized total power dissipation as a function of mounting base temperature
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 4 / 13 003aak715 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 1 0 - 1 1 1 0 1 0 2 t a l (ms) i a l i a l (a) (a) (1) (1) (2) (2) fig. 3. single pulse avalanche rating; avalanche current as a function of avalanche time 003aak716 1 1 0 1 0 2 1 0 3 1 0 - 1 1 1 0 1 0 2 v d s (v) i d i d (a) (a) d c d c 100 ms 100 ms 10 ms 10 ms 1 ms 1 ms 100 us 100 us t p = 10 us t p = 10 us limit r dson = v d s / i d limit r dson = v d s / i d fig. 4. safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base fig. 5 - 2.09 2.32 k/w
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 5 / 13 003aak717 1 0 - 6 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 - 2 1 0 - 1 1 1 0 t p (s) z th(j-mb) z th(j-mb) (k/w) (k/w) p t t p t t p = t single shot single shot = 0.5 = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 fig. 5. transient thermal impedance from junction to mounting base as a function of pulse duration 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics i d = 250 a; v gs = 0 v; t j = 25 c 100 - - v v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = -55 c 90 - - v i d = 1 ma; v ds = v gs ; t j = 25 c; fig. 10 ; fig. 11 2.3 3.3 4 v i d = 1 ma; v ds = v gs ; t j = 175 c; fig. 10 1 - - v v gs(th) gate-source threshold voltage i d = 1 ma; v ds = v gs ; t j = -55 c; fig. 10 - - 4.6 v v ds = 100 v; v gs = 0 v; t j = 25 c - 0.01 1 a i dss drain leakage current v ds = 100 v; v gs = 0 v; t j = 175 c - - 500 a v gs = -20 v; v ds = 0 v; t j = 25 c - 10 100 na i gss gate leakage current v gs = 20 v; v ds = 0 v; t j = 25 c - 10 100 na v gs = 10 v; i d = 5 a; t j = 25 c; fig. 12 - 57 71 m v gs = 10 v; i d = 5 a; t j = 100 c; fig. 13 ; fig. 12 - - 128 m r dson drain-source on-state resistance v gs = 10 v; i d = 5 a; t j = 175 c; fig. 13 ; fig. 12 - - 192 m r g gate resistance f = 10 mhz - 1.55 -
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 6 / 13 symbol parameter conditions min typ max unit dynamic characteristics i d = 5 a; v ds = 50 v; v gs = 10 v; t j = 25 c; fig. 14 ; fig. 15 - 16.4 - nc q g(tot) total gate charge i d = 0 a; v ds = 0 v; v gs = 10 v; t j = 25 c - 12.9 - nc q gs gate-source charge - 3.1 - nc q gs(th) pre-threshold gate- source charge - 2.1 - nc q gs(th-pl) post-threshold gate- source charge i d = 5 a; v ds = 50 v; v gs = 10 v; t j = 25 c; fig. 14 ; fig. 15 - 1 - nc q gd gate-drain charge i d = 5 a; v ds = 50 v; v gs = 10 v; t j 25 c; fig. 14 ; fig. 15 - 5.3 - nc v gs(pl) gate-source plateau voltage i d = 5 a; v ds = 50 v; t j = 25 c; fig. 14 ; fig. 15 - 4.3 - v c iss input capacitance - 773 - pf c oss output capacitance - 66 - pf c rss reverse transfer capacitance v ds = 50 v; v gs = 0 v; f = 1 mhz; t j = 25 c; fig. 16 - 48 - pf t d(on) turn-on delay time - 5.5 - ns t r rise time - 5.8 - ns t d(off) turn-off delay time - 12.4 - ns t f fall time v ds = 50 v; r l = 10 ; v gs = 10 v; r g(ext) = 5 ; t j = 25 c - 6.2 - ns source-drain diode v sd source-drain voltage i s = 15 a; v gs = 0 v; t j = 25 c; fig. 17 - 0.89 1.2 v t rr reverse recovery time - 35.8 - ns q r recovered charge i s = 5 a; di s /dt = -100 a/s; v gs = 0 v; v ds = 50 v; t j = 25 c - 50.7 - nc
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 7 / 13 003aak718 0 0.5 1 1.5 2 2.5 3 0 4 8 1 2 1 6 2 0 v d s (v) i d i d (a) (a) 4 v 4 v 4.5 v 4.5 v 5 v 5 v v g s = 5.5 v v g s = 5.5 v 6 v 6 v 6.5 v 6.5 v 7 v 7 v 8 v 8 v 10 v 10 v fig. 6. output characteristics; drain current as a function of drain-source voltage; typical values 003aak719 0 4 8 1 2 1 6 2 0 0 4 0 8 0 120 160 200 v g s (v) r dson r dson fig. 7. drain-source on-state resistance as a function of gate-source voltage; typical values 003aak720 0 2 4 6 8 1 0 1 2 0 2 4 6 8 1 0 i d (a) g f s g f s (s) (s) fig. 8. forward transconductance as a function of drain current; typical values 003aak721 0 1 2 3 4 5 6 7 8 0 5 1 0 1 5 2 0 2 5 v g s (v) i d i d (a) (a) t j = 25c t j = 25c 175c 175c fig. 9. transfer characteristics; drain current as a function of gate-source voltage; typical values
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 8 / 13 003aak573 -60 -30 0 3 0 6 0 9 0 120 150 180 0 1 2 3 4 5 t j (c) v gs(th) (v) v gs(th) (v) t y p t y p max max min min fig. 10. gate-source threshold voltage as a function of junction temperature 003aak574 v g s (v) 0 6 4 2 1 0 - 4 1 0 - 5 1 0 - 2 1 0 - 3 1 0 - 1 i d (a) 1 0 - 6 min typ max fig. 11. sub-threshold drain current as a function of gate-source voltage 003aak722 0 4 8 1 2 1 6 2 0 4 0 6 0 8 0 100 120 140 160 i d (a) r dson r dson 4.5 v 4.5 v 5 v 5 v 5.5 v 5.5 v 6 v 6 v 6.5 v 6.5 v 7 v 7 v 8 v 8 v 10 v 10 v fig. 12. drain-source on-state resistance as a function of drain current; typical values 0 0 3 a a j 3 2 3 0 0 . 6 1 . 2 1 . 8 2 . 4 3 - 6 0 0 6 0 1 2 0 1 8 0 t j ( c ) a fig. 13. normalized drain-source on-state resistance factor as a function of junction temperature
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 9 / 13 0 0 3 a a a 5 0 8 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 14. gate charge waveform definitions 003aak723 0 4 8 1 2 1 6 2 0 0 2 4 6 8 1 0 q g (nc) v g s v g s (v) (v) 50 v 50 v v g s = 20 v v g s = 20 v 80 v 80 v fig. 15. gate-source voltage as a function of gate charge; typical values 003aak724 1 0 - 1 1 1 0 1 0 2 1 0 1 0 2 1 0 3 v d s (v) c c (pf) (pf) c iss c iss c oss c oss c rss c rss fig. 16. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aak725 0 0.2 0.4 0.6 0.8 1 1.2 0 4 8 1 2 1 6 2 0 v s d (v) i s i s (a) (a) t j = 25c t j = 25c 175c 175c fig. 17. source current as a function of source-drain voltage; typical values
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 10 / 13 11. package outline references outline version european projection issue date iec jedec jeita sot1210 sot1210_po 11-12-19 12-03-12 unit (1) m m max nom min 0.90 0.10 0.35 0.20 0.30 2.70 0.65 a dimensions note 1. plastic or metal protrusions of 0.15 mm per side are not included. plastic single ended surface mounted package (lfpak33); 8 leads sot1210 a 1 b 0.35 b 1 c c 1 d (1) d 1 e (1) e 1 e 0.65 e 1 h 3.40 2.45 2.35 3.40 l 0.25 l p 0.50 0.20 0.10 w y 3.20 2.00 0.80 0.00 0.25 0.10 0.20 2.50 0.25 0 1.90 3.20 0.13 0.30 8 0 5 mm 2.5 scale a e 1 e x w a mounting base e 1 c 1 b 1 b a e l d 1 h d detail x c c a 1 l p c y 1 4 fig. 18. package outline lfpak33 (sot1210)
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 11 / 13 12. legal information 12.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". 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nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 12 / 13 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors standard warranty and nxp semiconductors product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp b.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors PSMN075-100MSE n-channel 100 v 71 m standard level mosfet in lfpak33 designed specifically for poe applications PSMN075-100MSE all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved product data sheet 26 march 2013 13 / 13 13. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ? nxp b.v. 2013. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 26 march 2013

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